Method for manufacturing semiconductor device

In a MOSFET, after an element region is formed, a wiring layer is formed subsequently to a barrier metal layer, and hydrogen annealing is performed. However, in the case of an n-channel MOSFET, a threshold voltage is lowered due to an occlusion characteristic of the barrier metal layer. Thus, an inc...

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Bibliographic Details
Main Author ISHIDA HIROYASU,KUBO HIROTOSHI,MIYAHARA SHOUJI,ONDA MASATO
Format Patent
LanguageEnglish
Published 23.11.2005
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:In a MOSFET, after an element region is formed, a wiring layer is formed subsequently to a barrier metal layer, and hydrogen annealing is performed. However, in the case of an n-channel MOSFET, a threshold voltage is lowered due to an occlusion characteristic of the barrier metal layer. Thus, an increased impurity concentration in a channel layer causes a problem that reduction in an on-resistance is inhibited. According to the present invention, after a barrier metal layer is formed, an opening is provided in the barrier metal layer on an interlayer insulating film, and hydrogen annealing treatment is performed after a wiring layer is formed. Thus, an amount of hydrogen which reaches a substrate is further increased, and lowering of a threshold voltage is suppressed. Moreover, since an impurity concentration in a channel layer can be lowered, an on-resistance is reduced.
Bibliography:Application Number: CN200510067475