Method for depositing thin film and thin film deposition system having separate jet orifices for spraying purge gas

• Main Author: PARK HEA J.,NA SUNG M
• Format: Patent
• Language: English
• Published: 09.11.2005
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

Disclosed are thin film deposition system and method. The thin film deposition system includes a reaction chamber; at least one susceptor installed in the reaction chamber for mounting a substrate thereon; a first gas sprayer rotatably located above the susceptor; and at least one second gas sprayer installed above the first gas sprayer for spraying purge gas. The thin film deposition system increases the absorption rate of source gas onto the surface of the substrate, efficiently shortens the supply cycles of the gases to improve the productivity thereof, and improves the cleaning effect of the purge gas so that a thin film is stably deposited on the substrate.