Vertucal structure of LED in series of gallium and method for eparating film from basis material

The structure includes a metal reflecting layer in use for reflecting light. The separating method includes steps: a laser array setup above the basis material, at least part of laser emitted from the laser array is able to penetrate the basis material and is absorbed by the thin film layer; laser f...

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Bibliographic Details
Main Authors MUREN LAI, XIANGJUN HONG
Format Patent
LanguageEnglish
Published 31.08.2005
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The structure includes a metal reflecting layer in use for reflecting light. The separating method includes steps: a laser array setup above the basis material, at least part of laser emitted from the laser array is able to penetrate the basis material and is absorbed by the thin film layer; laser from the array penetrates the sapphire basis material to irradiate the thin film layer; separating the basis material from the thin film layer. The invention reduces uneven thermal stresses and melting degrees between thin film and transition basis material when perpendicular LED structure is prepared. Since there is no thermal stress on the thin film, thus, the thin film is separated from transition basis material more evenly. The invention is more suitable to practical use.
Bibliography:Application Number: CN2004106382