Decoupling capacitors and semiconductor integrated circuit

VSS 302 is provided to a gate portion 304 and VDD 301 is provided to a source portion 305 and a drain portion 306 of a MOS transistor which constitutes a decoupling capacitor, and a potential NWVDD 303 different from that provided to the source portion 305 and the drain portion 306 is provided to a...

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Bibliographic Details
Main Author TSUTSUMI MASANORI,YANO JUNICHI
Format Patent
LanguageEnglish
Published 15.06.2005
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:VSS 302 is provided to a gate portion 304 and VDD 301 is provided to a source portion 305 and a drain portion 306 of a MOS transistor which constitutes a decoupling capacitor, and a potential NWVDD 303 different from that provided to the source portion 305 and the drain portion 306 is provided to a substrate portion 307 . If NWVDD 303 is set higher than VDD 301 , a depletion layer 309 is spread, so that a leakage current can be reduced instead of reducing a capacitance of the decoupling capacitor. In addition, if NWVDD 303 is set lower than VDD 301 so as not to cause latchup, the depletion layer 309 is reduced, so that the capacitance of the decoupling capacitor can be increased. By changing the potential NWVDD 303 provided to the substrate portion 307 , a capacitance value and a leakage current value of the decoupling capacitor can be controlled. Thereby making it possible to achieve a decoupling capacitor capable of controlling the capacitance value and the leakage current value and also having excellent response characteristics.
Bibliography:Application Number: CN200410101941