Method for manufacturing multi-layerstructure having strain and field effect transistor having strair layer

The invention includes following steps: first, carrying out reduced pressure chemical vapor deposition (RPCVD) to deposit a step-graded silicon-germanium (Si1-x Gex) layer and an upper cover layer of silicon-germanium in sequence by using Si2H6 or Si3H8 being as precursor of the preparing procedure;...

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Bibliographic Details
Main Authors KUNCHI LI, SHICHANG CHEN, LIANGJI YAO
Format Patent
LanguageEnglish
Published 04.05.2005
Edition7
Subjects
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CRYSTAL GROWTH
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SEMICONDUCTOR DEVICES
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Summary:The invention includes following steps: first, carrying out reduced pressure chemical vapor deposition (RPCVD) to deposit a step-graded silicon-germanium (Si1-x Gex) layer and an upper cover layer of silicon-germanium in sequence by using Si2H6 or Si3H8 being as precursor of the preparing procedure; then, carrying out RPCVD in order to deposit a monocrystalline silicon layer on the upper cover layer of silicon-germanium in order to form a strained layer by using silicane SiH4 or SiH2Cl2 as second reacting gas. The invention also discloses the method for manufacturing field-effect transistor possessing strained layer.
Bibliography:Application Number: CN20031103092