Nonvolatile memory device comprising a switching device and a resistant material and method of manufacturing the same

A nonvolatile memory device including one transistor and one resistant material and a method of manufacturing the nonvolatile memory device are provided. The nonvolatile memory device includes a substrate, a transistor formed on the substrate, and a data storage unit connected to a drain of the tran...

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Bibliographic Details
Main Authors PARK WAN-JUN, SEO SUN-AE, LEE MYOUNG-JAE, YOO IN-KYEONG
Format Patent
LanguageChinese
English
Published 10.08.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:A nonvolatile memory device including one transistor and one resistant material and a method of manufacturing the nonvolatile memory device are provided. The nonvolatile memory device includes a substrate, a transistor formed on the substrate, and a data storage unit connected to a drain of the transistor. The data storage unit includes a data storage material layer having different resistance characteristics in different voltage ranges.
Bibliography:Application Number: CN200410046544