Accelerometer with static self test realized by single silicon slice micro mechanical technique

This invention relates to an acceleration sensor with static electricity self-detection function realized through single silicon chip micro-machine techniques, which is characterized by synthesizing acceleration sensor and self-detecting performer in one same unit. The deep etching sidewall of silic...

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Bibliographic Details
Main Authors XINXIN LI, YUELIN WANG, BAOLUO CHENG
Format Patent
LanguageEnglish
Published 26.01.2005
Edition7
Subjects
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Summary:This invention relates to an acceleration sensor with static electricity self-detection function realized through single silicon chip micro-machine techniques, which is characterized by synthesizing acceleration sensor and self-detecting performer in one same unit. The deep etching sidewall of silicon is isolated into different electrical area through isolation bars of deep trench electricity to separate proper area to realize the static electricity driving. The said sensor employed piezoresistance sensitization principle to self-limit work in plane. The said apparatus etches a hanging weaving spar by use of deep reaction icon effect and forms sensitive resistance and static electricity driving capacitor through sidewall expanding in deep etching trench and isolation of sidewall. The said acceleration sensor is made up of regular single non-bonding silicon and its components is integrated with single chips which is helpful for package and batch production. íí
Bibliography:Application Number: CN2004118076