Method for preparing modified infrared detecting material - amorphous SiGe film

• Main Authors: RUIDONG YANG, YU YANG, GUANGKE WANG
• Format: Patent
• Language: English
• Published: 19.01.2005
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE

The invention is a method of preparing modified infrared detecting material-noncrystalline SiGe film, especially a method of optimizing and modifying noncrystalline SiGe alloy film, containing the following two key steps: firstly in a superhigh vacuum state, adopting electron beam deposition process to prepare an alpha-SiGe film and then using ion injection process to modify the alpha-SiGe film. The method can obtain an alpha-SiGe film infrared detecting material with high temperature coefficient of resistance (TCR), increase production efficiency and reduce production cost and solve the defect that plasma will destroy the deposited film so as to make the material bad because light discharge as growing the film by routine process.