Method of forming a conductive line for a semiconductor device using a carbon nanotube and semiconductor device manufactured using the method

• Main Author: CHOI WON-BONG,BAE EUN-JU,HORII HIDEKI
• Format: Patent
• Language: Chinese; English
• Published: 03.11.2004
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMISTRY; COMPOUNDS THEREOF; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INFORMATION STORAGE; INORGANIC CHEMISTRY; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; METALLURGY; NANOTECHNOLOGY; NON-METALLIC ELEMENTS; PERFORMING OPERATIONS; PHYSICS; SEMICONDUCTOR DEVICES; SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; STATIC STORES; TRANSPORTING

公开一种使用碳纳米管来形成用于半导体装置的导电线的方法以及用该方法制造的半导体装置。该方法包括：采用表面预处理法活化半导体装置的电极的表面；在电极表面上形成一绝缘层并在该绝缘层中形成一接触孔，以使得电极的部分活化表面暴露在外；通过接触孔向电极的活化表面通入含碳元素的气体，以在电极的活化表面上生长形成导电线的碳纳米管。电极表面的活化过程可被在电极表面上形成催化金属层的步骤所代替。按照该方法，具有高电流密度的碳纳米管可形成用于半导体装置的导电线，并因此可制造出超高集成化的半导体装置。 Provided are a method of forming a conductive line for a semiconductor device using a carbon nanotube and a semiconductor device manufactured using the method. The method includes: activating a surface of an electrode (120) of the semiconductor device using surface pretreatment; forming an insulating layer (130) on the electrode, and forming a contact hole (132) in the insulating layer in such a way that a part of the activated surface (122) of the electrode is exposed outside; and feeding a carbon-containing gas on the activated surface of the electrode via the contact hole to grow a carbon nanotube (140), which forms the conductive line, on the activated surface of the electrode. The activation step of the electrode surface can be replaced with formation step of a catalytic metal layer on the electrode surface. According to the method, the carbon nanotube with a high current density forms a conductive line for a semiconductor device, and thus, an ultra-highly integrated semiconductor device can be manufactured.