Method for producing bipolar transistor

• Main Author: SHINDO MASAO
• Format: Patent
• Language: Chinese; English
• Published: 29.09.2004
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

本发明提供一种双极型晶体管的制造方法。通过沿半导体单晶基板(100)的主面的法线方向在半导体单晶基板(100)上离子注入(150)第二导电型的第一杂质，而形成集电极层(102)。而且，沿着对半导体单晶基板(100)的法线方向具有倾斜角度的方向在半导体单晶基板(100)上，通过以比第一杂质的离子注入处理更高的注入能量离子注入(151)第二导电型的第二杂质，形成埋入集电极层(103)。然后，在集电极层(102)的表面部的规定区域上形成第一导电型的基极层(104)以及第二导电型的发射极层(105)。由此，既可以避免由多重离子注入法产生的问题，又可以不进行外延生长工序而制造双极型晶体管。 A method for fabricating a bipolar transistor includes: a first step of implanting, along the normal direction of the principle surface of a first-conductive-type semiconductor single crystalline substrates ions of a second-conductive-type first impurity into the semiconductor single crystalline substrate to form a second-conductive-type collector layer; a second step of implanting, along the direction tilted from the normal direction, ions of a second-conductive-type second impurity into the semiconductor single crystalline substrate at a higher injection energy than that in the ion implantation of the first step to form a buried collector layer in a lower portion of the collector layer; and a third step of forming each of a first-conductive-type base layer and a second-conductive-type emitter layer in a predetermined region of a surface portion of the collector layer.