Gate dielectric layer, its electric performace improving method and Mos crytsal

• Main Authors: KAILING MAI, YOUMIN LIN, LIANGJI YAO
• Format: Patent
• Language: Chinese; English
• Published: 08.09.2004
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The process of making gate dielectric layer with improved electric performance includes the following steps: providing one semiconductor substrate; forming one gate dielectric layer including HfO2 on the semiconductor substrate; processing with H2 containing gas; and processing with O2 containing gas. The MOS electric crystal includes one semiconductor substrate and one high dielectric constant gate layer set on the surface of the semiconductor substrate. The pip aims at providing one gate dielectric layer as one kind of new material and the method of improving its electric performance for meeting the requirement of designing semiconductor module. 本发明提供一种改善闸极介电层的电性的方法，其中包括以下步骤：提供一半导体基底；形成一闸极介电层于上述半导体基底表面，其中上述闸极介电层包括氧化铪(HfO#-[2])； 实施一含氢气体处理；以及实施一含氧气体处理。一种具有高介电常数的闸极介电层的金氧半电晶体，其中包括：一半导体基底；一高介电常数的闸极介电层，设置于上述半导体基底表面。本发明主要目的在于提供一种新材质的闸极介电层以及一种改善闸极介电层的电性的方法，不仅提供良好的闸极介电层，更可使该闸极介电层符合半导体组件设计上的需求。