Semiconductor laser element, its mfg. method and disc reproducing and recording unit

• Main Authors: KASAI HIDENORI, YAMAMOTO KEI, HIRUKAWA HIDEICHI
• Format: Patent
• Language: Chinese; English
• Published: 26.05.2004
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES USING STIMULATED EMISSION; ELECTRICITY; INFORMATION STORAGE; INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER; PHYSICS

一种半导体激光器件具有至少一层第一导电型下覆盖层，一层量子势阱活性层和一层第二导电型上覆盖层，它们是堆积在第一导电型GaAs基底上的。该量子势阱活性层是由交替堆积的、由以InGaAs为基的材料制成的阻挡层和势阱层组成的。该量了势阱活性层是在用第二导电型杂质掺杂中生长的，为的是让该半导体激光器件除具有长的寿命之外，即使在大功率的驱动这时也能显示出高可靠性。 A semiconductor laser device has at least a first conductivity-type lower clad layers, a quantum well active layer, and a second conductivity-type upper clad layer, which are stacked on a first conductivity-type GaAs substrate. The quantum well active layer is composed of a barrier layer and a well layer which are alternately stacked and both made of an InGaAsP-based material. The quantum well active layer is grown while being doped with a second conductivity type of impurity so as for the semiconductor laser device to exhibits high reliability even at the time of high-power driving as well as long life.