Semiconductor laser element, its mfg. method and disc reproducing and recording unit

一种半导体激光器件具有至少一层第一导电型下覆盖层，一层量子势阱活性层和一层第二导电型上覆盖层，它们是堆积在第一导电型GaAs基底上的。该量子势阱活性层是由交替堆积的、由以InGaAs为基的材料制成的阻挡层和势阱层组成的。该量了势阱活性层是在用第二导电型杂质掺杂中生长的，为的是让该半导体激光器件除具有长的寿命之外，即使在大功率的驱动这时也能显示出高可靠性。 A semiconductor laser device has at least a first conductivity-type lower clad layers, a quantum well active layer, and a...

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Bibliographic Details
Main Authors KASAI HIDENORI, YAMAMOTO KEI, HIRUKAWA HIDEICHI
Format Patent
LanguageChinese
English
Published 26.05.2004
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
INFORMATION STORAGE
INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER
PHYSICS
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Summary:一种半导体激光器件具有至少一层第一导电型下覆盖层，一层量子势阱活性层和一层第二导电型上覆盖层，它们是堆积在第一导电型GaAs基底上的。该量子势阱活性层是由交替堆积的、由以InGaAs为基的材料制成的阻挡层和势阱层组成的。该量了势阱活性层是在用第二导电型杂质掺杂中生长的，为的是让该半导体激光器件除具有长的寿命之外，即使在大功率的驱动这时也能显示出高可靠性。 A semiconductor laser device has at least a first conductivity-type lower clad layers, a quantum well active layer, and a second conductivity-type upper clad layer, which are stacked on a first conductivity-type GaAs substrate. The quantum well active layer is composed of a barrier layer and a well layer which are alternately stacked and both made of an InGaAsP-based material. The quantum well active layer is grown while being doped with a second conductivity type of impurity so as for the semiconductor laser device to exhibits high reliability even at the time of high-power driving as well as long life.
Bibliography:Application Number: CN200310104682