Semiconductor device and its making and estimating method, and processing condition estimating method

• Main Authors: HORI MITSUAKI, TAMURA NAOYOSHI, SHIGENO MAYUMI
• Format: Patent
• Language: Chinese; English
• Published: 12.05.2004
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; MEASURING; MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES; PHYSICS; SEMICONDUCTOR DEVICES; TESTING

由氮氧化硅膜构成的栅极绝缘膜淀积在半导体衬底上。栅极淀积在栅极绝缘膜上。源区和漏区淀积在栅极两侧。栅极绝缘膜中存在的主要氮原子与氮原子总数的比例为20％或20％以下，其中每个主要氮原子的三个键都耦合到硅原子，并且连接到主要氮原子的三个硅原子的每个的其余三个键都耦合到其它氮原子。 A gate insulating film made of silicon oxynitride is disposed on the partial surface area of a semiconductor substrate. A gate electrode is disposed on the gate insulating film. Source and drain regions are disposed on both sides of the gate electrode. An existence ratio of subject nitrogen atoms to a total number of nitrogen atoms in the gate insulating film is 20% or smaller, wherein three bonds of each subject nitrogen atom are all coupled to silicon atoms and remaining three bonds of each of three silicon atoms connected to the subject nitrogen atom are all coupled to other nitrogen atoms.