Method for preparing low stress composite medium film of non-refrigeration infrared focal plane device

• Main Authors: YONGPING CHEN, QIANG LIU, PINGZHI LIANG
• Format: Patent
• Language: Chinese; English
• Published: 28.04.2004
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS; COLORIMETRY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT; MEASURING; PHYSICS; RADIATION PYROMETRY; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE; TESTING

This invention discloses a preparation method for low stress composite dielectric film of non-chilling infrared focal devices including generating a compression stress dielectric film with the index of refraction between 1.48-1.59 and a tension stress dielectric film with the index of refraction between 1.65-2.0 by changing technical conditions on a conventional single frequency RF source PECVO device and bucking the stress mutually of the tension and the compression films in opposite stress features, so as to a composite film with smaller stress. Advantages: low stress, stable property and good technical repeatability. 本发明公开了一种非致冷红外焦平面器件低应力复合介质膜的制备方法，该方法是在常规的单频率射频源的PECVD设备上通过改变工艺条件生长出折射率在1.48～1.59之间的压应力介质膜和折射率在1.65～2.0之间的张应力介质膜，并通过改变两种膜的厚度比例，使应力性质相反的张应力膜和压应力膜的应力相互抵消，从而得到应力较小的复合膜。本发明方法生长的这种复合介质膜的优点是：介质膜应力较低，在一定范围内应力性质和大小可以控制，介质膜性质稳定，工艺重复性好，制备设备要求相对较低。