Method to improve performance of microelectronic circuits

• Main Authors: HARPER JAMES M E, FENG GEORGE C, CLEVENGER LAWRENCE A
• Format: Patent
• Language: Chinese; English
• Published: 31.03.2004
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

适合于一种集成电路晶体管结构的方法和结构，其包括具有第一导电材料和第二材料的栅极导体。本发明有一个邻近所述栅极导体的不可变形的衬垫，并且在所述栅极导体和所述衬垫之间有一个间隙。所述第一导电材料可以是多晶硅，且所述第二材料可以是一种金属或者一种聚合物。所述第二材料作为所述间隙的填充物。在本发明中，所述间隙保存环境气体并且降低了所述栅极导体的电阻。 A method and structure for an integrated circuit transistor structure includes a gate conductor that has a first conductive ma...