Method to improve performance of microelectronic circuits
适合于一种集成电路晶体管结构的方法和结构,其包括具有第一导电材料和第二材料的栅极导体。本发明有一个邻近所述栅极导体的不可变形的衬垫,并且在所述栅极导体和所述衬垫之间有一个间隙。所述第一导电材料可以是多晶硅,且所述第二材料可以是一种金属或者一种聚合物。所述第二材料作为所述间隙的填充物。在本发明中,所述间隙保存环境气体并且降低了所述栅极导体的电阻。 A method and structure for an integrated circuit transistor structure includes a gate conductor that has a first conductive ma...
Saved in:
Main Authors | , , |
---|---|
Format | Patent |
Language | Chinese English |
Published |
31.03.2004
|
Edition | 7 |
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | 适合于一种集成电路晶体管结构的方法和结构,其包括具有第一导电材料和第二材料的栅极导体。本发明有一个邻近所述栅极导体的不可变形的衬垫,并且在所述栅极导体和所述衬垫之间有一个间隙。所述第一导电材料可以是多晶硅,且所述第二材料可以是一种金属或者一种聚合物。所述第二材料作为所述间隙的填充物。在本发明中,所述间隙保存环境气体并且降低了所述栅极导体的电阻。
A method and structure for an integrated circuit transistor structure includes a gate conductor that has a first conductive material and a second material. The invention has non-deformable spacers adjacent the gate conductor and a gap between the gate conductor and the spacer. The first conductive material can be polysilicon and the second material can be either a metal or a polymer. The second material acts as a placeholder for the gap. In the invention, the gap holds ambient gas and decreases resistance of the gate conductor. |
---|---|
Bibliography: | Application Number: CN20031027771 |