Method of manufacturing bicarrier complementary gold oxygen semi conductor on silicon insolator base

• Main Author: JIXI WU
• Format: Patent
• Language: Chinese; English
• Published: 03.03.2004
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Modifying MOS technique, the invention prepares dual carriers transistor and CMOS transistor synchronistically so as to reduce technical steps and cost greatly. Moreover, since dual carriers CMOS component is formed on substrate of silicon on insulator, the invention reduces parasitic capacitance of component, prevents component from latch-up phenomenon as well as raising integrity of components and operation speed. 一种在硅绝缘体基底上制造双载子互补式金氧半导体的方法，其将金氧半晶体管的工艺加以修改，以同步制作双载子晶体管与互补式金氧半晶体管，如此将可大幅减少工艺步骤，并降低工艺成本。再者，由于本发明在硅绝缘体基底上形成双载子互补式金氧半导体元件，故可降低元件的寄生电容，避免元件发生闭锁现象，并可增进元件的集成度与操作速度。