Capacitance with combined type storage section structure and its manufacturing method

Conducting oxide SrRuO3, BaRuO3, (Ba, Sr)RuO3 in structure of perovskite are laid on a layer of metal ruthenium. The structure of conducting oxide/Ru metal layer is as the combined type storage section. RuO2/Ru structure can be used as the barrier layer for the dielectric layer formed followed-up. U...

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Main Authors BORU XU, MINGCHONG JIANG, CONGMING ZHU
Format Patent
LanguageEnglish
Published 24.12.2003
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Abstract Conducting oxide SrRuO3, BaRuO3, (Ba, Sr)RuO3 in structure of perovskite are laid on a layer of metal ruthenium. The structure of conducting oxide/Ru metal layer is as the combined type storage section. RuO2/Ru structure can be used as the barrier layer for the dielectric layer formed followed-up. Using the Ru metal layer improves crystallinity of conducting oxide and the characteristic of dielectric layer formed followed-up greatly as well as decreases the temp of the procedure for depositing conducting oxide.
AbstractList Conducting oxide SrRuO3, BaRuO3, (Ba, Sr)RuO3 in structure of perovskite are laid on a layer of metal ruthenium. The structure of conducting oxide/Ru metal layer is as the combined type storage section. RuO2/Ru structure can be used as the barrier layer for the dielectric layer formed followed-up. Using the Ru metal layer improves crystallinity of conducting oxide and the characteristic of dielectric layer formed followed-up greatly as well as decreases the temp of the procedure for depositing conducting oxide.
Author CONGMING ZHU
BORU XU
MINGCHONG JIANG
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Snippet Conducting oxide SrRuO3, BaRuO3, (Ba, Sr)RuO3 in structure of perovskite are laid on a layer of metal ruthenium. The structure of conducting oxide/Ru metal...
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SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title Capacitance with combined type storage section structure and its manufacturing method
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