Capacitance with combined type storage section structure and its manufacturing method

Conducting oxide SrRuO3, BaRuO3, (Ba, Sr)RuO3 in structure of perovskite are laid on a layer of metal ruthenium. The structure of conducting oxide/Ru metal layer is as the combined type storage section. RuO2/Ru structure can be used as the barrier layer for the dielectric layer formed followed-up. U...

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Bibliographic Details
Main Authors BORU XU, MINGCHONG JIANG, CONGMING ZHU
Format Patent
LanguageEnglish
Published 24.12.2003
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Conducting oxide SrRuO3, BaRuO3, (Ba, Sr)RuO3 in structure of perovskite are laid on a layer of metal ruthenium. The structure of conducting oxide/Ru metal layer is as the combined type storage section. RuO2/Ru structure can be used as the barrier layer for the dielectric layer formed followed-up. Using the Ru metal layer improves crystallinity of conducting oxide and the characteristic of dielectric layer formed followed-up greatly as well as decreases the temp of the procedure for depositing conducting oxide.
Bibliography:Application Number: CN2002118635