Capacitance with combined type storage section structure and its manufacturing method
Conducting oxide SrRuO3, BaRuO3, (Ba, Sr)RuO3 in structure of perovskite are laid on a layer of metal ruthenium. The structure of conducting oxide/Ru metal layer is as the combined type storage section. RuO2/Ru structure can be used as the barrier layer for the dielectric layer formed followed-up. U...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
24.12.2003
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Summary: | Conducting oxide SrRuO3, BaRuO3, (Ba, Sr)RuO3 in structure of perovskite are laid on a layer of metal ruthenium. The structure of conducting oxide/Ru metal layer is as the combined type storage section. RuO2/Ru structure can be used as the barrier layer for the dielectric layer formed followed-up. Using the Ru metal layer improves crystallinity of conducting oxide and the characteristic of dielectric layer formed followed-up greatly as well as decreases the temp of the procedure for depositing conducting oxide. |
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Bibliography: | Application Number: CN2002118635 |