Stacked capacitor structure and producing method thereof

A robust material (such as SiN, Ta2O5 or Al2O3) as additional barrier layer being able to block off oxygen diffusion is setup on the columniform storage electrode and covers the bottom of the columniform concave hole. The barrier layer can prevent oxygen atoms from piecing into the lower barrier lay...

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Bibliographic Details
Main Authors MASATOSHI SAKITA, CONGMING ZHU, MASAHIRO KIYOTOSHI
Format Patent
LanguageEnglish
Published 19.11.2003
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A robust material (such as SiN, Ta2O5 or Al2O3) as additional barrier layer being able to block off oxygen diffusion is setup on the columniform storage electrode and covers the bottom of the columniform concave hole. The barrier layer can prevent oxygen atoms from piecing into the lower barrier layer or embolism caused by oxygen atoms when capacitance dielectric layer is deposited as well as prevent penetration of the wet etchant in forming the storage electrode. Moreover, the barrier layer also decreases aspect ratio when ferroelectric material is deposited as well as avoids forming the area of easy electric leakage in the capacitor so as to lower leakage current of capacitor.
Bibliography:Application Number: CN2002119259