Memory structures

A memory structure that includes a first electrode (35, 135, 235, 335, 435, 535, 635, 743), a second electrode (39, 139, 239a, 239b, 339a, 339b, 439a, 439b, 539a, 539b, 639a, 639b, 735), a third electrode (43, 133, 233, 333, 341, 433, 441, 533, 633, 641, 739), a control element (25) disposed between...

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Bibliographic Details
Main Authors KOLL ANDREW, LAZAROFF DENNIS M, FRICKE PETER
Format Patent
LanguageEnglish
Published 15.10.2003
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A memory structure that includes a first electrode (35, 135, 235, 335, 435, 535, 635, 743), a second electrode (39, 139, 239a, 239b, 339a, 339b, 439a, 439b, 539a, 539b, 639a, 639b, 735), a third electrode (43, 133, 233, 333, 341, 433, 441, 533, 633, 641, 739), a control element (25) disposed between the first electrode and the second electrode, and a memory storage element (23) disposed between the second electrode and the third electrode. At least one of the control element and memory storage element is protected from contamination by at least one of the first electrode, second electrode and third electrode.
Bibliography:Application Number: CN20031008638