Process for preparing FeS2 on monosilicon substrate by magnetically controlled sputter to Fe film

• Main Authors: YANHUI LIU, WEI HUANG, LIANG MENG
• Format: Patent
• Language: English
• Published: 25.12.2002
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE

The present invention discloses a preparing method of iron disulfide for single crystal silicon substrate with iron coating synthesis of magnetic control sputtering. Two single crystal silicon slicesin bit vectors of 100 and 111 are used as the substrate of film carrier to deposit 25-150 nm thickness of pure iron coating by magnetic control sputtering, pure iron coating and the sublimation sulfur powder of requested mass enabling to create 80 KPa pressure is packed in quartz tube, after vacuum pumping the quartz tube is heated in a heating furnace to the temperature of 400-500 degree C with temperature rising rate of 3 degree C per minute for heat sulfurizing reaction for 10-20 hour, and then is cooled to the room temperature by the temp. drop rate of 2 degree C per minute.