Concaved stack capacitor and its contacted plug and their producing method
The present invention provides a method to make a depressed stack capacitance and its contact plug, and the method includes the following preparing steps: first providing a substrate having a first insulation layer on its surface, them forming a etching stopage layer on the first insulation layer, f...
Saved in:
Main Authors | , , |
---|---|
Format | Patent |
Language | English |
Published |
06.11.2002
|
Edition | 7 |
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | The present invention provides a method to make a depressed stack capacitance and its contact plug, and the method includes the following preparing steps: first providing a substrate having a first insulation layer on its surface, them forming a etching stopage layer on the first insulation layer, forming at least one contact hole by etching the etching stopage layer and the first insulation layer. A conductive layer and a barrier layer are deposited in the contact hole in squence to fully fill the contact hole. A second insulation layer is formed on the etching stopage layer and the barrier layer. The second insulation layer is etched to form a concave hole with its hole depth at least down to the concave hole surface of etching stopage layer and barrier layer. A lower electrode layer isformed at the bottom and internal edge of the concave hole. |
---|---|
Bibliography: | Application Number: CN20011010430 |