Production method of automatically aligning contact window opening

The said method includes utilizing polycrystalline silicon material to protect the top covering cover the wires or even the gap wall corner of the wire side wall, and etching the silicon oxide layer with traditional silicon oxide etching liquid to form the automatically aligned contact window openin...

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Bibliographic Details
Main Authors BORU XU, HAOJIE LIU, XIQUAN CHEN
Format Patent
LanguageEnglish
Published 06.11.2002
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The said method includes utilizing polycrystalline silicon material to protect the top covering cover the wires or even the gap wall corner of the wire side wall, and etching the silicon oxide layer with traditional silicon oxide etching liquid to form the automatically aligned contact window opening. The traditional silicon oxide etching liquid has higher selective etching to silicon oxide than to silicon nitride as well as extremely with selective etching to silicon oxide than to polycrystalline silicon.
Bibliography:Application Number: CN2001109532