Metal resistor material, sputtering target material, resistor film and their manufactures

• Main Author: OOSAKU TOSHIYUKI,SATO IWA,MORIMOTO TOSHIO
• Format: Patent
• Language: English
• Published: 13.06.2007
• Subjects: ALLOYS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; FERROUS OR NON-FERROUS ALLOYS; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TREATMENT OF ALLOYS OR NON-FERROUS METALS

This invention provides a metallic resistance material, of which the resistance temperature coefficient is about O, having a high temperature stability superior than Ni-Cr-Al-Si series alloy. The resistance thin film is formed by sputtering method using a sputtering target which contains: 1.0~15.0% wt of Al, and 0.01~0.5% wt of a rare earth element, and Cr and Ni at a ratio 0.15~1.1 (Cr/Ni) as remainder. The resistance thin film is further subject to heat treatment in an atmosphere under the temperature of 200 DEG C~500 DEG C for 1~10 hours.