Integrated circuit and method for programming charge storage memory cells

A circuit and method for self-converging programming of a charge storage memory cell, such as NROM or floating gate flash, having a source and a drain in a substrate, a charge storage element and a control gate. The method includes applying source voltage, inducing a body effect that increases the e...

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Bibliographic Details
Main Author TZU-HSUAN,WU HSU
Format Patent
LanguageEnglish
Published 16.05.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:A circuit and method for self-converging programming of a charge storage memory cell, such as NROM or floating gate flash, having a source and a drain in a substrate, a charge storage element and a control gate. The method includes applying source voltage, inducing a body effect that increases the effective threshold, and increasing the source voltage along with the drain voltage to moderate hot electron injection efficiency during the program operation, at least during a portion of the program operation in which convergence on a target threshold occurs. A selected gate voltage is applied during the operation to establish the target threshold voltage. In multiple bit cells, the gate voltage is set according to the data values to be stored, enabling self-convergence at more than one target threshold.
Bibliography:Application Number: CN200410096502