Gain-clamped semiconductor optical amplifier having horizontal lasing structure and manufacturing method thereof

• Main Author: LEE JEONG-SEOK,KANG JUNG-KOO,HWANG SEONG-TAEK
• Format: Patent
• Language: English
• Published: 18.04.2007
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES USING STIMULATED EMISSION; ELECTRICITY

A gain-clamped semiconductor optical amplifier having a horizontal lasing structure in which an oscillation direction of a laser is different from an amplification direction of a signal, and a method for manufacturing the gain-clamped semiconductor optical amplifier. The gain-clamped semiconductor optical amplifier includes a gain layer for amplifying an optical signal. A Bragg lattice layer is formed on both sides of the gain layer along a longitudinal direction of the gain layer for enabling light having a corresponding wavelength to resonate in a direction vertical to the longitudinal direction of the gain layer. A passive light waveguide restrains light resonating between lattices of the Bragg lattice layer. An electrode supplies current to the gain layer, and a current-blocking layer prevents current from flowing to an area other than the gain layer.