Semiconductor device containing liner structure

A semiconductor device which includes an improved liner structure formed in a via having extended sidewall portions and a bottom penetrating a metal line. The liner structure includes two liner layers, the first being on the via sidewalls, but not the bottom, and the second being on the first layer...

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Bibliographic Details
Main Author STAMPER ANTHONY K.,COONEY EDWARD C. III,GEFFKEN ROBERT M.,MARINO JEFFREY R.,SIMON ANDREW H
Format Patent
LanguageEnglish
Published 11.04.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device which includes an improved liner structure formed in a via having extended sidewall portions and a bottom penetrating a metal line. The liner structure includes two liner layers, the first being on the via sidewalls, but not the bottom, and the second being on the first layer and the extended sidewall portions and bottom of the via. A method of making the liner structure, in which the first layer is deposited prior to an etching or cleaning step, which extends the via into the metal line, is also disclosed.
Bibliography:Application Number: CN200480003364