Semiconductor device

A semiconductor device comprising a first insulating layer formed above a semiconductor substrate, and comprising a first insulating material, a second insulating material and a hole, a relative dielectric constant of the first insulating material being 3 or less, a Young's modulus of the first...

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Bibliographic Details
Main Author ITO SACHIYO,HASUNUMA MASAHIKO
Format Patent
LanguageEnglish
Published 21.03.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device comprising a first insulating layer formed above a semiconductor substrate, and comprising a first insulating material, a second insulating material and a hole, a relative dielectric constant of the first insulating material being 3 or less, a Young's modulus of the first insulating material being 10 GPa or less, a linear expansivity of the first insulating material being greater than 30x10-6° C.-1, and a linear expansivity of the second insulating material being 30x10-6° C.-1 or less, and a second insulating layer formed on the first insulating layer, the second insulating layer having a groove connected to the hole, wherein a linear expansivity alpha of the first insulating layer within 6 mum from the hole is 30x10-6° C.-1 or less, where alpha = ∑ i = 1 ⁢ v i ⁢ alpha i , vi and alphai are a volume ratio and a linear expansivity of an i-th insulating material.
Bibliography:Application Number: CN200510053695