Selective nitridation of gate oxides

A method of fabricating a semiconductor structure. The method includes forming a first feature of a first active device and a second feature of a second active device, introducing a first amount of nitrogen into the first feature of the first active device, and introducing a second amount of nitroge...

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Bibliographic Details
Main Author BURNHAM JAY S.,ELLIS-MONAGHAN JOHN J.,NAKOS JAMESS.,QUINLIVAN JAMES J
Format Patent
LanguageEnglish
Published 28.02.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of fabricating a semiconductor structure. The method includes forming a first feature of a first active device and a second feature of a second active device, introducing a first amount of nitrogen into the first feature of the first active device, and introducing a second amount of nitrogen into the second feature of the second active device, the second amount of nitrogen being different from the first amount of nitrogen.
Bibliography:Application Number: CN200510005624