Preparation method for silicon oxide carbide

Nanometer emulsion of cross-linked polysiloxane is diluted with water to the concentration of 0.1-2 % and painted onto copper net or silicon base board with carbon film sprayed, and after drying in the air, the copper net or silicon base board is cracked at 600-1300 deg.c for 1-2.5 hr under the prot...

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Bibliographic Details
Main Author DUNMING,JIANG ZHANG
Format Patent
LanguageEnglish
Published 07.02.2007
Subjects
ARTIFICIAL STONE
CEMENTS
CERAMICS
CHEMISTRY
COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS
COMPOUNDS THEREOF
CONCRETE
INORGANIC CHEMISTRY
LIME, MAGNESIA
METALLURGY
NON-METALLIC ELEMENTS
REFRACTORIES
SLAG
TREATMENT OF NATURAL STONE
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Summary:Nanometer emulsion of cross-linked polysiloxane is diluted with water to the concentration of 0.1-2 % and painted onto copper net or silicon base board with carbon film sprayed, and after drying in the air, the copper net or silicon base board is cracked at 600-1300 deg.c for 1-2.5 hr under the protection of N2, Ar, etc. to obtain nanometer silicon oxycarbide particles on the copper net or compact silicon oxycarbide film on the surface of the silicon base board. Or, the nanometer emulsion of cross-linked polysiloxane may be demulsified to obtain cross-linked polysiloxane powder, and the cross-linked polysiloxane powder may be pyrolyzed to obtain silicon oxycarbide particles, which are porous or compact depending on different conditions. The present invention has the advantages of easily obtained material, low cost, and controllable size of obtained silicon oxycarbide particles.
Bibliography:Application Number: CN200510038120