Semiconductor device and semoconductor base board and their manufacture

Disclosed is a semiconductor device which comprises a substrate in which surface is formed a depression or a projection having a closed figure when viewed from the substrate normal and a semiconductor layer which is formed on the surface of the substrate by crystal growth from at least an inside fac...

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Bibliographic Details
Main Authors ISHIDA MASAKO, NAKAMURA NAOTSUGU, ORITA KENKO
Format Patent
LanguageEnglish
Published 16.05.2001
Edition7
Subjects
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CRYSTAL GROWTH
DEVICES USING STIMULATED EMISSION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SEMICONDUCTOR DEVICES
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Summary:Disclosed is a semiconductor device which comprises a substrate in which surface is formed a depression or a projection having a closed figure when viewed from the substrate normal and a semiconductor layer which is formed on the surface of the substrate by crystal growth from at least an inside face of the depression or outside face of the projection.
Bibliography:Application Number: CN20001029584