Monophyletic mixture of metal oxygen silicide

This invention pertains to complex mixtures of the formula M is a metal having a valence of from 2-6, L1 is an anionic ligand and L2 is a siloxide or silyl amide ligand suited for producing stable thin-film metal silicates, v is equal to the valence of the metal, and 0<x<v. The bonding is such...

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Bibliographic Details
Main Author R.D. CLARK,A.K. HUOKBERG
Format Patent
LanguageEnglish
Published 11.10.2006
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Summary:This invention pertains to complex mixtures of the formula M is a metal having a valence of from 2-6, L1 is an anionic ligand and L2 is a siloxide or silyl amide ligand suited for producing stable thin-film metal silicates, v is equal to the valence of the metal, and 0<x<v. The bonding is such that an M-O-Si or an M-N-Si linkage exists, respectively, and the stability for the complex is provided by the organic ligand. The invention also relates to a process for preparing the metal siloxide complexes. Thus, the complexes can be represented by the formulas (R)mM-(O-SiR1 R2 R3)n and (R)mM-ÄN-(SiR1 R2 R3)y(R4)2-yÜn wherein M is a metal having a valence of 2-6, m and n are positive integers and m plus n is equal to the valence of the metal M. The R type groups; i.e., R, R1, R2, R3, and R4 represent an organo ligand.
Bibliography:Application Number: CN20031055631