Self-aligned magnetic clad write line and manufacturing method thereof

A self-aligned magnetic clad bit line structure ( 274 ) for a magnetic memory element ( 240 a) and its method of formation are disclosed, wherein the self-aligned magnetic clad bit line structure ( 274 ) extends within a trench ( 258 ) and includes a conductive material ( 264 ), magnetic cladding si...

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Bibliographic Details
Main Author ROBERT E. JONES,CAROLE C. BARRON,ERIC D. LUCKOWSKI
Format Patent
LanguageEnglish
Published 28.06.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:A self-aligned magnetic clad bit line structure ( 274 ) for a magnetic memory element ( 240 a) and its method of formation are disclosed, wherein the self-aligned magnetic clad bit line structure ( 274 ) extends within a trench ( 258 ) and includes a conductive material ( 264 ), magnetic cladding sidewalls ( 262 ) and a magnetic cladding cap ( 252 ). The magnetic cladding sidewalls ( 262 ) at least partially surround the conductive material ( 264 ) and the magnetic cladding cap ( 252 ) is substantially recessed within the trench with respect to the top of the trench.
Bibliography:Application Number: CN20018020458