Method of fabricating low-dielectric constant interlevel dielectric films for back base line interconnects with enhanced adhesion and low-defect density

A substantially defect-free, low-k dielectric film having improved adhesion is provided by (a) applying a silane coupling agent containing at least one polymerizable group to a surface of a substrate so as to provide a substantially uniform coating of said silane-coupling agent on said substrate; (b...

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Bibliographic Details
Main Author SIMONYI EVA ERIKA,LEE KANG-WOOK,HAY JOHN C.,ECKERT ANDREW ROBERT,HEDRICK JEFFREY CURTIS,LINIGER ERIC GERHARD
Format Patent
LanguageEnglish
Published 12.04.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A substantially defect-free, low-k dielectric film having improved adhesion is provided by (a) applying a silane coupling agent containing at least one polymerizable group to a surface of a substrate so as to provide a substantially uniform coating of said silane-coupling agent on said substrate; (b) heating the substrate containing the coating of the silane-coupling agent at a temperature of about 90° C. or above so as to provide a surface containing Si-O bonds; (c) rinsing the heated substrate with a suitable solvent that is effective in removing any residual silane-coupling agent; and (d) applying a dielectric material to the rinsed surface containing the Si-O bonds.
Bibliography:Application Number: CN20028006345