Semiconductor device and method for fabricating the same

A capacitor 11 made up of a lower electrode 8, a capacitive insulating film 9 of an insulating metal oxide and an upper electrode 10 is formed over a semiconductor substrate 1. A first-layer wire 14 is formed on a passivation film 12 that covers the capacitor 11. A first interlevel dielectric film 1...

Full description

Saved in:
Bibliographic Details
Main Author NAGANO YOSHIHISA,ITO TOYOJI,IMANISHI SADAYUKI
Format Patent
LanguageEnglish
Published 01.03.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A capacitor 11 made up of a lower electrode 8, a capacitive insulating film 9 of an insulating metal oxide and an upper electrode 10 is formed over a semiconductor substrate 1. A first-layer wire 14 is formed on a passivation film 12 that covers the capacitor 11. A first interlevel dielectric film 15 is deposited to cover the first-layer wire 14. A second interlevel dielectric film 17 is deposited over the first interlevel dielectric film 15 with a barrier film 16, which overlaps the capacitor 11 for preventing hydrogen from diffusing, interposed therebetween. A second-layer wire 19 is formed on the second interlevel dielectric film 17. The first interlevel dielectric film 15 has a hydrogen content lower than that of the second interlevel dielectric film 17.
Bibliography:Application Number: CN20018021958