Oxide sintered body and sputtering target, and prepn. process of transparent conductive oxide film used as electrode

An oxide sintered body for sputtering target is provided wherein the main component is indium oxide, and it contains titanium such that the atomic ratio of Ti/In is 0.003 to 0.120, and the specific resistance is 1 kOmegam or less.

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Bibliographic Details
Main Author ABE YOSHIYUKI,ISHIYAMA NORIKO,OHARA TAKESHI
Format Patent
LanguageEnglish
Published 01.03.2006
Subjects
ARTIFICIAL STONE
BASIC ELECTRIC ELEMENTS
CABLES
CEMENTS
CERAMICS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS
CONCRETE
CONDUCTORS
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRICITY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
INSULATORS
LIME, MAGNESIA
METALLURGY
REFRACTORIES
SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES
SLAG
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
TREATMENT OF NATURAL STONE
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Summary:An oxide sintered body for sputtering target is provided wherein the main component is indium oxide, and it contains titanium such that the atomic ratio of Ti/In is 0.003 to 0.120, and the specific resistance is 1 kOmegam or less.
Bibliography:Application Number: CN200310120357