Electronic circuit

An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layer is less than 1500 , e.g., between 100 and 750 . A first layer consisting mainly of titanium and nitrogen is formed on the semicond...

Full description

Saved in:
Bibliographic Details
Main Authors MINORU MIYAZAKI, MUTSUO YAMAMOTO, AKANE MURAKAMI
Format Patent
LanguageEnglish
Published 29.12.1999
Edition6
Subjects
ADVERTISING
BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
CRYPTOGRAPHY
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING
DIFFUSION TREATMENT OF METALLIC MATERIAL
DISPLAY
DISPLAYING
EDUCATION
ELECTRIC HEATING
ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FREQUENCY-CHANGING
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
LABELS OR NAME-PLATES
METALLURGY
NON-LINEAR OPTICS
OPTICAL ANALOGUE/DIGITAL CONVERTERS
OPTICAL LOGIC ELEMENTS
OPTICS
PHYSICS
SEALS
SEMICONDUCTOR DEVICES
SIGNS
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
Online AccessGet full text

Cover

More Information
Summary:An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layer is less than 1500 , e.g., between 100 and 750 . A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting of aluminum is formed on top of the first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.
Bibliography:Application Number: CN19991007129