Insulated gate transistor, method of manufacturing same, and semiconductor integrated circuit device

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Bibliographic Details
Main Authors MASATSUGU AMISHIRO, ATSUO WATANABE, TAKASUMI OHYANAGI
Format Patent
LanguageEnglish
Published 15.12.1999
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Bibliography:Application Number: CN1999105631