磁传感器
本发明涉及一种磁传感器。磁传感器具备:至少一个MR元件;被配置为在从第一方向观察时与至少一个MR元件重叠的铁磁性层;在第二方向上配置于至少一个MR元件的两侧的绝缘层;配置于至少一个MR元件、铁磁性层及绝缘层之上的基底层;以及配置于基底层上的反铁磁性层。反铁磁性层包含经由基底层与铁磁性层相对的反铁磁性部、和经由基底层与至少一个MR元件及绝缘层相对但不与铁磁性层相对的非相对部分。 A magnetic sensor includes at least one MR element, a ferromagnetic layer disposed to overlap the at least one...
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Format | Patent |
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Language | Chinese |
Published |
01.08.2025
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Subjects | |
Online Access | Get full text |
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Summary: | 本发明涉及一种磁传感器。磁传感器具备:至少一个MR元件;被配置为在从第一方向观察时与至少一个MR元件重叠的铁磁性层;在第二方向上配置于至少一个MR元件的两侧的绝缘层;配置于至少一个MR元件、铁磁性层及绝缘层之上的基底层;以及配置于基底层上的反铁磁性层。反铁磁性层包含经由基底层与铁磁性层相对的反铁磁性部、和经由基底层与至少一个MR元件及绝缘层相对但不与铁磁性层相对的非相对部分。
A magnetic sensor includes at least one MR element, a ferromagnetic layer disposed to overlap the at least one MR element when viewed in a first direction, an insulating layer disposed on both sides of the at least one MR element in a second direction, an underlying layer disposed on the at least one MR element, the first ferromagnetic layer, and the insulating layer, and an antiferromagnetic layer disposed on the underlying layer. The antiferromagnetic layer includes an antiferromagnetic portion that faces the ferromagnetic layer via the underlying layer, and a non-facing part that faces the at least one MR element and the insulating layer via the underlying layer but does not face the ferromagnetic layer. |
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Bibliography: | Application Number: CN202510125415 |