一种改善磁控溅射薄膜膜厚均匀性的工艺方法、磁控溅射薄膜和磁控溅射设备

• Format: Patent
• Language: Chinese
• Published: 01.08.2025
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

本发明提供一种改善磁控溅射薄膜膜厚均匀性的工艺方法、磁控溅射薄膜和磁控溅射设备，属于半导体制造领域。该工艺方法包括以下步骤：提供晶圆，设定磁控溅射设备中的靶磁间距为TM0，靶基距为TW0，然后在所述晶圆表面溅射沉积一层金属薄膜或金属化合物薄膜，记为Y0层；判断Y0层的方块电阻均匀性是否满足预设要求，若不满足预设要求，则进行下述步骤至少i次，直至满足预设要求，i≥1；调整磁控溅射设备中的靶磁间距为TMi，靶基距为TWi，且控制TMi:TWi=(0.5-1.5):(50-80)，在新的晶圆上溅射沉积一层金属薄膜或金属化合物薄膜，记为Yi层，i≥1。本发明对膜厚均匀性具有优良的改善效果。