Film growth method and film growth apparatus capable of forming magnesium oxide film with increased film growth speed

An auxiliary anode (30) having a ring-shaped permanent magnet (31) is placed in a vacuum chamber (11) such that the auxiliary anode is coaxial with a central axis of a hearth (20) and is positioned so as to surround an upper area of the hearth. A plasma beam generated by a plasma beam generator (13)...

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Bibliographic Details
Main Authors SAKAMI TOSHIYUKI, TANAKA KATSU
Format Patent
LanguageEnglish
Published 09.09.1998
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRICITY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Summary:An auxiliary anode (30) having a ring-shaped permanent magnet (31) is placed in a vacuum chamber (11) such that the auxiliary anode is coaxial with a central axis of a hearth (20) and is positioned so as to surround an upper area of the hearth. A plasma beam generated by a plasma beam generator (13) using arc discharge is guided into the hearth. Magnesium (Mg) is used as a vaporization material on the hearth. Gas mixed with oxygen is supplied into the vacuum chamber. As a result, magnesium oxide particles sublimated from the hearth react with oxygen plasma generated by the plasma to form a magnesium oxide (MgO) film on a substrate (40).
Bibliography:Application Number: CN19981000026