Level shift device structure

The invention provides a level shift device structure, which is characterized by comprising a level shift MOS (Metal Oxide Semiconductor) transistor positioned in a semiconductor region and comprising a source region, a drain region and a doped region; the isolation structure extends from the two si...

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Bibliographic Details
Main Authors ZHAO BO, WU WENJIE, ZHANG LINGFANG, JIN JIN
Format Patent
LanguageChinese
English
Published 13.09.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The invention provides a level shift device structure, which is characterized by comprising a level shift MOS (Metal Oxide Semiconductor) transistor positioned in a semiconductor region and comprising a source region, a drain region and a doped region; the isolation structure extends from the two sides of the doped region respectively so as to jointly form an annular closed shape, and the semiconductor region is divided into a high-voltage side region surrounded by the isolation structure and a low-voltage side region located on the periphery of the isolation structure; the drain electrode region is arranged in the high-voltage side region; and a source region disposed in the low voltage side region. The voltage resistance of the device is improved by setting the shape and the thickness of the isolation structure. 本发明提供一种电平移位器件结构，其特征在于，包括：位于一半导体区域内的电平移位MOS晶体管，包括源极区域，漏极区域和掺杂区域；隔离结构，从所述掺杂区域的两侧分别延伸，以共同呈环形闭合形状，将所述半导体区域划分为被所述隔离结构包围的高压侧区域，和位于所述隔离结构外围的低压侧区域；漏极区域，设置于所述高压侧区域中；以及源极区域，设置于所述低压侧区域中。本发明通过设置隔离结构的的形状和厚度以提高器件
Bibliography:Application Number: CN202410832316