Preparation method of SGT-MOSFET device and SGT-MOSFET device

• Main Authors: LIU KEKE, ZHANG LIBO, LE SHUANGSHEN, YUAN QINGWEN, HE ZENGYI
• Format: Patent
• Language: Chinese; English
• Published: 27.08.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

According to the preparation method of the SGT-MOSFET device and the SGT-MOSFET device provided by the embodiment of the invention, one-time isotropic etching is added to remove sharp corners on the upper surface of a shield gate to form a smooth polycrystalline silicon interval oxide layer morphology, polycrystalline silicon is deposited again, and finally grid polycrystalline silicon is formed. The oxide layer formed on the top of the shield gate is smoother and does not form charge accumulation, so that the electrical property of the device prepared by the preparation process provided by the invention is more stable, and the reliability of the device is higher. 本申请实施例提供了一种SGT-MOSFET器件的制备方法及SGT-MOSFET器件，增加一次各向同性刻蚀使屏蔽栅上表面尖角去除，形成平滑的多晶硅间隔氧化层的形貌，再次淀积多晶硅，最终形成栅极多晶硅，本申请由于将屏蔽栅顶部进行刻蚀后，在屏蔽栅顶部形成的氧化层会比较平滑，不会形成电荷积聚，所以通过本申请提供的制备工艺制备的器件的电性能比较稳定，器件的可靠性比较高。