Method for programming memory and memory

• Main Authors: DU ZHICHAO, OH JIN-YONG, WANG YU, TIAN YE, GUO XIAOJIANG, TANG QIANG, JIANG KE
• Format: Patent
• Language: Chinese; English
• Published: 16.08.2024
• Subjects: INFORMATION STORAGE; PHYSICS; STATIC STORES

The invention provides a method for programming a memory. The method comprises the following steps of: performing first programming on the memory by using a first programming voltage; verifying a first programming result; counting a first programming failure bit, and performing second programming on the memory by using a second programming voltage which is greater than the first programming voltage; judging whether the failure bit number of the first programming is smaller than a first preset value or not, and if not, verifying a second programming result; and counting a failure bit number of the second programming, judging whether the failure bit number of the second programming is smaller than a second preset value or not, and if not, performing programming again until the failure bit number is smaller than the second preset value, and the second preset value is smaller than the first preset value. According to the method, the first preset value is set to be a large capacitance value, whether programming su