Method for programming memory and memory

The invention provides a method for programming a memory. The method comprises the following steps of: performing first programming on the memory by using a first programming voltage; verifying a first programming result; counting a first programming failure bit, and performing second programming on...

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Bibliographic Details
Main Authors DU ZHICHAO, OH JIN-YONG, WANG YU, TIAN YE, GUO XIAOJIANG, TANG QIANG, JIANG KE
Format Patent
LanguageChinese
English
Published 16.08.2024
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:The invention provides a method for programming a memory. The method comprises the following steps of: performing first programming on the memory by using a first programming voltage; verifying a first programming result; counting a first programming failure bit, and performing second programming on the memory by using a second programming voltage which is greater than the first programming voltage; judging whether the failure bit number of the first programming is smaller than a first preset value or not, and if not, verifying a second programming result; and counting a failure bit number of the second programming, judging whether the failure bit number of the second programming is smaller than a second preset value or not, and if not, performing programming again until the failure bit number is smaller than the second preset value, and the second preset value is smaller than the first preset value. According to the method, the first preset value is set to be a large capacitance value, whether programming su
Bibliography:Application Number: CN202410648977