Self-healing circuit of low-temperature-drift band-gap reference source under influence of HCI effect

• Main Authors: ZHANG JUN'AN, DING CHAOYUAN, LI CHAO, LI TIEHU, ZHANG QINGWEI
• Format: Patent
• Language: Chinese; English
• Published: 16.08.2024
• Subjects: CONTROLLING; PHYSICS; REGULATING; SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES

The invention discloses a self-healing circuit of a low-temperature-drift band-gap reference source under the influence of an HCI effect, and relates to the technical field of electrics, the self-healing circuit comprises a curvature compensation circuit, an on-chip monitoring circuit and a plurality of analog controller circuits, the analog controller circuits are used for generating proper body bias voltage and feeding back the proper body bias voltage to a low-temperature-drift band-gap reference source circuit, and the low-temperature-drift band-gap reference source circuit is connected with the low-temperature-drift band-gap reference source circuit. And performing voltage compensation on the plurality of first NMOS tubes. According to the on-chip monitoring circuit, a curvature compensation circuit is copied, and the variation of the threshold voltage of the NMOS transistor caused by the HCI effect can be accurately monitored. In the self-healing circuit provided by the invention, the increment of the t