Three-dimensional memory array and preparation method thereof, memory and electronic equipment

• Main Authors: LIN QI, FAN RENSHI, FANG YICHEN, XU JUNHAO, BU SITONG
• Format: Patent
• Language: Chinese; English
• Published: 09.08.2024
• Subjects: ELECTRICITY

The embodiment of the invention provides a three-dimensional storage array and a preparation method thereof, a memory and electronic equipment, relates to the technical field of storage, and is used for improving the storage capacity of the three-dimensional storage array. The three-dimensional memory array includes a substrate and a plurality of memory layers formed on the substrate. The plurality of memory layers are stacked in a direction perpendicular to the substrate. The memory layer includes a plurality of memory cells. The memory cell includes a capacitor and a transistor electrically connected. The transistor comprises a grid electrode, a channel, a first electrode and a second electrode, wherein the first electrode and the second electrode are arranged in the direction perpendicular to the substrate and surround the channel. The capacitor comprises a first capacitor electrode, a second capacitor electrode and a capacitor layer arranged between the first capacitor electrode and the second capacitor e